Characterization of antiphase domains on GaAs grown on Ge substrates by conductive atomic force microscopy for photovoltaic applications-Reference-Cited by-同舟云学术

Characterization of antiphase domains on GaAs grown on Ge substrates by conductive atomic force microscopy for photovoltaic applications

Published:2011-07 Issue:7 Volume:95 Page:1949-1954
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Galiana B.,Rey-Stolle I.,Beinik I.,Algora C.,Teichert C.,Molina-Aldareguia J.M.,Tejedor P.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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3. R.R. King, A. Boca, W. Hong, X.-Q. Liu, D. Bhusari, D. Larrabee, K.M. Edmondson, D.C. Law, C.M. Fetzer, S. Mesropian, N.H. Karam, Band-gap-engineered architectures for high-efficiency multijunction concentrator solar cells, in: Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition, 2009, Hamburg, Germany, pp. 21–25.

4. Antiphase disorder in GaAs/Ge heterostructures for solar cells;Lazzarini;Micron,2000

5. Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy;Hudait;Mater. Res. Bull.,2000

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