Improved evaluation of saturation currents and bulk lifetime in industrial Si solar cells by the quasi steady state photoconductance decay method

Author:

Liu Binhui,Chen Yifeng,Yang Yang,Chen Daming,Feng Zhiqiang,Altermatt Pietro P.,Verlinden Pierre,Shen Hui

Funder

Science and Technology Planning Project of Guangdong Province

Natural Science Foundation of Jiangsu Province for Young Scientist

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference72 articles.

1. D.E. Kane, R.M. Swanson, Measurement of the emitter saturation current by a contactless photoconductivity decay method, in: Proceedings of the 18th IEEE Photovoltaic Specialists Conference, 1985, pp. 578–583.

2. Contactless determination of current–voltage characteristics and minority carrier lifetimes in semiconductors from quasi-steady-state photoconductance data;Sinton;Appl. Phys. Lett.,1996

3. Measuring and interpreting the lifetime of silicon wafers;Cuevas;Sol. Energy,2004

4. Improved quantitative description of Auger recombination in crystalline silicon;Richter;Phys. Rev. B,2012

5. Lifetimes exceeding 1ms in 1-Ω cm boron-doped Cz-silicon;Walter;Sol. Energy Mater. Sol. Cells,2014

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