Author:
Puttnins S.,Jander S.,Wehrmann A.,Benndorf G.,Stölzel M.,Müller A.,von Wenckstern H.,Daume F.,Rahm A.,Grundmann M.
Subject
Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Diode breakdown related to recombination active defects in block-cast multicrystalline silicon solar cells;Kwapil;Journal of Applied Physics,2009
2. Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells;Lausch;Physica Status Solidi B Basic Solid State Physics,2009
3. Understanding junction breakdown in multicrystalline solar cells;Breitenstein;Journal of Applied Physics,2011
4. Internal field emission in silicon p–n junctions;Chynoweth;Physical Review,1957
5. A. Dubois, J. Veirmann, N. Enjalbert, P. Scheiblin, Hard breakdown mechanisms of compensated p-type and n-type single-crystalline silicon solar cells, Solid-State Electronics, 76 (2012), 36-39, 10.1016/j.sse.2012.05.033
Cited by
21 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献