Reverse-Bias Defect Creation in Cu(In,Ga)Se2 Solar Cells and Impact of Encapsulation

Author:

Vaas Timon12ORCID,Pieters Bart1ORCID,Gerber Andreas1ORCID,Rau Uwe12ORCID

Affiliation:

1. IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany

2. Jülich Aachen Research Alliance (JARA-Energy) and Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Schinkelstr. 2, 52062 Aachen, Germany

Abstract

Reverse breakdown in Cu(In,Ga)Se2 (CIGS) solar cells can lead to defect creation and performance degradation. We present pulsed reverse-bias experiments, where we stress CIGS solar cells with a short reverse voltage pulse of ten milliseconds and detect the electrical and thermal response of the cell. This way, we limit the duration of the reverse stress, allowing us to study the initial stages of reverse-bias defect creation in CIGS solar cells and modules. Our results show that permanent damage can develop very fast in under milliseconds. Furthermore, we find the location of defect creation as well as the susceptibility to defect creation under reverse bias depends strongly on whether the cell is encapsulated or not, where encapsulated cells are generally more robust against reverse bias.

Funder

Federal Ministry for Economic Affairs and Climate Action

Ministry of Culture and Science of the State of North Rhine-Westphalia

HGF LLEC Project

Publisher

MDPI AG

Subject

General Medicine

Reference23 articles.

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