Improvement in separation rate of epitaxial lift-off by hydrophilic solvent for GaAs solar cell applications-Reference-Cited by-同舟云学术

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Improvement in separation rate of epitaxial lift-off by hydrophilic solvent for GaAs solar cell applications

Published:2014-03 Issue: Volume:122 Page:233-240
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Wu Fan-Lei,Ou Sin-Liang,Horng Ray-Hua,Kao Yu-Cheng

Funder

National Science Council (Taiwan)

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Extreme selectivity in the lift-off of epitaxial GaAs films;Yablonovitch;Appl. Phys. Lett.,1987

2. Influence of radius of curvature on the lateral etch rate of the weight induced epitaxial lift-off process;Voncken;Mater. Sci. Eng., B,2002

3. Thin-film GaAs epitaxial lift-off solar cells for space applications;Schermer;Prog. Photovoltaics,2005

4. GaInP single junction and GaInP/GaAs two junction thin-film solar cell structures by epitaxial lift-off;Yazawa;Sol. Energy Mater. Sol. Cells,1998

5. Process damage free thin-film GaAs solar cells by epitaxial liftoff with GaInP window layer;Yazawa;Sol. Energy Mater. Sol. Cells,1998

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