Influence of radius of curvature on the lateral etch rate of the weight induced epitaxial lift-off process-Reference-Cited by-同舟云学术

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Influence of radius of curvature on the lateral etch rate of the weight induced epitaxial lift-off process

Published:2002-09 Issue:3 Volume:95 Page:242-248
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Voncken M.M.A.J,Schermer J.J,Maduro G,Bauhuis G.J,Mulder P,Larsen P.K

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. High efficiency GaAs thin film solar cells by peeled film technology

2. Extreme selectivity in the lift‐off of epitaxial GaAs films

3. Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates

4. Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond

5. Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substrates

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1. III–V Thin Films for Flexible, Cost-Effective, and Emerging Applications in Optoelectronics and Photonics;Accounts of Materials Research;2023-11-15

2. Strain-Engineered Multilayer Epitaxial Lift-Off for Cost-Efficient III–V Photovoltaics and Optoelectronics;ACS Applied Materials & Interfaces;2023-01-03

3. Demonstration of using HF-etchant mixed into CO2 to lift-off thin-film GaAs layers by supercritical fluid technology;Modern Physics Letters B;2021-12-14

4. Topical review: pathways toward cost-effective single-junction III–V solar cells;Journal of Physics D: Applied Physics;2021-12-03

5. Selective Etching of (111)B‐Oriented Al x Ga 1− x As‐Layers for Epitaxial Lift‐Off;physica status solidi (a);2020-11-02

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