Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Human-Computer Interaction
Reference10 articles.
1. Resonant-cavity InGaN quantum-well blue light-emitting diodes
2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
3. Low-resistance ohmic contacts to p-type GaN
4. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
5. Indium tin oxide ohmic contact to highly doped n-GaN
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