Non-contact near-field cavity perturbation method for quantitative dielectric measurement and metallic defect inspection-Reference-Cited by-同舟云学术

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Non-contact near-field cavity perturbation method for quantitative dielectric measurement and metallic defect inspection

Published:2024-07 Issue: Volume:145 Page:103124
ISSN:0963-8695
Container-title:NDT & E International
language:en
Short-container-title:NDT & E International

Author:

Peng Cuiling,Chen Xiaolong,Zhan Jinsong,Chen Zhuo,Nian Fushun,Huan Huiting

Funder

Shaanxi Province Natural Science Foundation

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Zhejiang Province Natural Science Foundation

Publisher

Elsevier BV

Reference40 articles.

1. Low-dielectric, low-profile IC substrate material development for 5G applications;Muguruma,2022

2. Deposition of stable, low κ and high deposition rate SiF4-doped TEOS fluorinated silicon dioxide (SiOF) films;Bhan;Thin Solid Films,1997

3. Low-k dielectric materials;Shamiryan;Mater Today,2004

4. Facile strategy for preparing a rosin-based low-k material: molecular design of free volume;Fu;Biomacromolecules,2022

5. Polybenzoxazine/boron nitride foam: a promising low-k, flame-retardant and robust material;Zhang;J Mater Sci,2021

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