The Effect of Pad-asperity Curvature on Material Removal Rate in Chemical-mechanical Polishing
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference24 articles.
1. Zantye PB, Kumar A, Sikder AK. Chemical mechanical planarization for micro electronics applications. Mater Sci Eng R 2004; 45: 89-220.
2. Preston FW. The theory and design of plate glass polishing machines. J Soc Glass Tech 1927; 11: 214-256.
3. Paul E. A model of chemical mechanical polishing. J Electrochem Soc 2001; 148(6): G355-G358.
4. Luo J, Dornfeld DA. Material removal mechanism in chemical mechanical polishing: theory and modelling. IEEE Trans Semicon Manuf 2001; 14(2): 112-133.
5. Zhao Y, Chang L. A micro-contact and wear model for chemical- mechanical polishing of silicon wafers. Wear 2002; 252: 220-226.
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