Preparation and characterization of low pressure chemically vapor deposited silicon nitride thin films from tris(diethylamino)chlorosilane and ammonia-Reference-Cited by-同舟云学术

Preparation and characterization of low pressure chemically vapor deposited silicon nitride thin films from tris(diethylamino)chlorosilane and ammonia

Published:2005-05 Issue:1-2 Volume:479 Page:137-143
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Liu Xue-Jian,Chen Yao-Feng,Li Hui-Li,Sun Xing-Wei,Huang Li-Ping

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Characterization of Plasma‐Enhanced Chemical Vapor Deposited Nitride Films Used in Very Large Scale Integrated Applications

2. The electronic properties of plasma‐deposited films of hydrogenated amorphous SiNx(0

3. Plasma-Enhanced Chemical Vapor Deposition of Silicon Nitride

4. Relationship between array excitation distribution and radiation pattern ripple depth

5. Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia

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