HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors-Reference-Cited by-同舟云学术

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HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors

Published:2007-04 Issue:12 Volume:515 Page:5109-5112
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Jeong S.-W.,Lee H.J.,Kim K.S.,You M.T.,Roh Y.,Noguchi T.,Xianyu W.,Jung J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications

2. Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors—a critical review

3. Characteristics of HfO[sub 2]/HfSi[sub x]O[sub y] film as an alternative gate dielectric in metal–oxide–semiconductor devices

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor;Applied Surface Science;2023-05

2. In-Zn-Sn-O thin film based transistor with high-k HfO2 dielectric;Thin Solid Films;2022-07

3. Study of Oxides Formed in HfO₂/Si Structure for High-k Dielectric Applications;Solid State Phenomena;2012-03

4. Electrical, Structural and Interfacial Characterization of HfO 2 Films on Si Substrates;Chinese Physics Letters;2011-08

5. Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors;Applied Physics Letters;2010-03-08

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