A comparative study of CF 4 , Cl 2 and HBr + Ar inductively coupled plasmas for dry etching applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference51 articles.
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2. Industrial Plasma Engineering;Rooth,1995
3. Dry etching for VLSI;Roosmalen,1991
4. Silicon Processing for the VLSI Era;Wolf,2000
5. Handbook of Plasma Processing Technology,1990
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4. Noble gas effect on ACL etching selectivity to SiO2 films;Plasma Processes and Polymers;2023-06-08
5. ON THE COMPARISON OF REACTIVE-ION ETCHING MECHANISMS FOR SiO2 AND Si3N4 IN HBr + Ar PLASMA;ChemChemTech;2023-05-15
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