Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO 2−x thin films

Author:

Bousoulas P.,Michelakaki I.,Tsoukalas D.

Funder

Aristeia II

European Union (European Social Fund ESF)

National Strategic Reference Framework (NSRF)

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference51 articles.

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3. Bipolar resistive switching of chromium oxide for resistive random access memory;Chen;Solid State Electron.,2011

4. Complementary resistive switching in tantalum oxide-based resistive memory devices;Yang;Appl. Phys. Lett.,2012

5. Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO3;Muenstermann;Appl. Phys. Lett.,2012

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