Analyses of interface adhesion between porous SiOCH low-k film and SiCN layers by nanoindentation and nanoscratch tests-Reference-Cited by-同舟云学术

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Analyses of interface adhesion between porous SiOCH low-k film and SiCN layers by nanoindentation and nanoscratch tests

Published:2008-06 Issue:16 Volume:516 Page:5334-5338
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chang Shou-Yi,Tsai Hung-Chun,Chang Jien-Yi,Lin Su-Jien,Chang Yee-Shyi

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections

2. Low dielectric constant materials for microelectronics

3. Characterization and integration of a CVD porous SiOCH (k<2.5) with enhanced mechanical properties for 65 nm CMOS interconnects and below

4. Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

5. Properties and thermal stability of porous organic low-dielectric-constant materials

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