Author:
Yoshioka Kazutoshi,Yokogawa Ryo,Ogura Atsushi
Funder
Japan Society for the Promotion of Science
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric;Shang,2002
2. Future of strained si/semiconductors in nanoscale MOSFETs;Thompson,2006
3. The ultimate CMOS devices and beyond;Kuhn,2012
4. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys;Fischetti;J. Appl. Phys.,1996
5. GeSn channel n and p MOSFETs;Gupta;ECS Trans.,2013
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