Amorphous Ta–Si–N diffusion barriers on GaAs-Reference-Cited by-同舟云学术

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Amorphous Ta–Si–N diffusion barriers on GaAs

Published:2004-07 Issue:1-2 Volume:459 Page:292-296
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kuchuk A,Kaminska E,Piotrowska A,Golaszewska K,Dynowska E,Lytvyn O.S,Nowicki L,Ratajczak R

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal)

2. J.S. Reid, Ph.D. Thesis, California Institute of Technology, 1995

3. Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations

4. Ternary amorphous metallic thin films as diffusion barriers for Cu metallization

5. Co-sputter deposited Ta–Si diffusion barrier between Si and Cu: the effects of Si content on the barrier property

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2. Optical, Mechanical, and Thermal Properties of Free-Standing MoSi2Nx and ZrSi2Ny Nanocomposite Films;Technical Physics;2019-11

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4. Fabrication of Ta–Si–N/Ag nanocomposite thin films with near-zero temperature coefficient of resistance;Journal of Alloys and Compounds;2015-08

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