Antireflection coating on InP for semiconductor detectors-Reference-Cited by-同舟云学术

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Antireflection coating on InP for semiconductor detectors

Published:2006-10 Issue:2 Volume:515 Page:547-550
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hantehzadeh M.R.,Ghoranneviss M.,Sari A.H.,Sahlani F.,Shokuhi A.,Shariati M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Brain and T. P. Lee, IEEE. Trans. Electron Devices. Vol. ED-12, P. 2673, 7985.

2. Photodetectors for fiber transmission systems

3. Preferred orientation of AlN plates prepared by chemical vapour deposition of AlCl3 + NH3 system

4. Structural characteristics of AlN films deposited by pulsed laser deposition and reactive magnetron sputtering: A comparative study

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1. Design and development of four-layer anti-reflection coating stacks (ZnS and YF3 thin films) for HgCdTe-based mid-wave infrared detectors;Materials Science in Semiconductor Processing;2023-08

2. A novel teaching-learning based optimization approach for design of broad-band anti-reflection coatings;Swarm and Evolutionary Computation;2017-06

3. Mechanical properties of Ta-Al-N thin films deposited by cylindrical DC magnetron sputtering: Influence of N2% in the gas mixture;The European Physical Journal Plus;2016-06

4. Single-layered porous silica films on polyethylene terephthalate substrates for antireflection coatings;Thin Solid Films;2011-03

5. Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching;ECS Transactions;2010-04-16

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