Author:
Sato Taketomo,Yoshizawa Naoki,Okazaki Hiroyuki,Hashizume Tamotsu
Abstract
Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared light ranges. The reflectance strongly depended on the surface morphology of the porous structures prepared by the electrochemical process, and the lowest reflectance of 0.1% in the visible light range was obtained from a sample after the irregular top layer was completely removed. Large anodic photocurrents were obtained on the InP porous structures that had low reflectance surfaces with deeper pores.
Publisher
The Electrochemical Society
Cited by
1 articles.
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