Suppression of Mn segregation in Ge/Mn5Ge3 heterostructures induced by interstitial carbon-Reference-Cited by-同舟云学术

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Suppression of Mn segregation in Ge/Mn5Ge3 heterostructures induced by interstitial carbon

Published:2012-02 Issue:8 Volume:520 Page:3410-3414
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Dau Minh-Tuan,Le Thanh Vinh,Le Thi-Giang,Spiesser Aurélie,Petit Matthieu,Michez Lisa A.,Ngo Thu-Huong,Vu Dinh Lam,Nguyen Quang Liem,Sebban Pierre

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Epitaxial ferromagnetic Mn5Ge3 on Ge(111)

2. Initial stages of Mn adsorption on Ge(111)

3. First-principles characterization of ferromagneticMn5Ge3for spintronic applications

4. Competing magnetic phases of Mn5Ge3compound

5. Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injection

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Material for Si-Based Light Source Application for CMOS Technology;Silicon Materials;2019-08-07

2. The effect of carbon element on optical properties of n-doped Ge on silicon substrate;Modern Physics Letters B;2018-07-19

3. Mediation effect of sub-monolayer carbon on interfacial mixing in Ge growth on Si(100);physica status solidi (c);2014-07-25

4. Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy;Journal of Applied Physics;2013-08-28

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