Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4818945
Reference44 articles.
1. Ge-on-Si laser operating at room temperature
2. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
3. Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism
4. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
5. Enhanced photoluminescence of heavily n-doped germanium
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