High-energy storage performance achieved in PbZrO3 thin films via Li+ doping and low-temperature annealing-Reference-Cited by-同舟云学术

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High-energy storage performance achieved in PbZrO3 thin films via Li+ doping and low-temperature annealing

Published:2024-04 Issue: Volume:794 Page:140289
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Zhang Changhai,Zhang Xue,Zhang Bowen,Yin Chao,Zhang Yue,Zhang Yongquan^ORCID,Zhang Tiandong^ORCID,Cui Yang^ORCID,Chi Qingguo^ORCID

Publisher

Elsevier BV

Reference51 articles.

1. High energy storage performance of all-inorganic flexible antiferroelectric-insulator multilayered thin films;Yin;ACS. Appl. Mater. Interfaces.,2022

2. High energy storage performance for flexible PbZrO3 thin films by seed layer engineering;Yin;Ceram. Int.,2022

3. Energy storage and release properties of Sr-doped (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric ceramics;Xu;Ceram. Int.,2016

4. Ultrahigh–energy density lead-free dielectric films via polymorphic nanodomain design;Pan;Science,2019

5. High energy storage performance of opposite double-heterojunction ferroelectricity-insulators;Zhang;Adv. Funct. Mater.,2018

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