Resistive switching characteristics of multilayered (HfO2/Al2O3)n n=19 thin film-Reference-Cited by-同舟云学术

Resistive switching characteristics of multilayered (HfO2/Al2O3)n n=19 thin film

Published:2012-02 Issue:8 Volume:520 Page:3415-3418
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Tzeng Wen-Hsien,Zhong Chia-Wen,Liu Kou-Chen,Chang Kow-Ming,Lin Horng-Chih,Chan Yi-Chun,Kuo Chun-Chih,Tsai Feng-Yu,Tseng Ming Hong,Chen Pang-Shiu,Lee Heng-Yuan,Chen Frederick,Tsai Ming-Jinn

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

2. Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3

3. Nanoionics-based resistive switching memories

4. Identification of a determining parameter for resistive switching of TiO2 thin films

5. Giant and Stable Conductivity Switching Behaviors in ZrO2Films Deposited by Pulsed Laser Depositions

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