Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates-Reference-Cited by-同舟云学术

Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates

Published:2006-08 Issue:1-2 Volume:513 Page:300-306
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Leitz C.W.,Vineis C.J.,Carlin J.,Fiorenza J.,Braithwaite G.,Westhoff R.,Yang V.,Carroll M.,Langdo T.A.,Matthews K.,Kohli P.,Rodder M.,Wise R.,Lochtefeld A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Symp. on VLSI Tech.;Rim,2002

2. IEDM Tech. Digest;Wang,2003

3. IEDM Tech. Digest;Sanuki,2003

4. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of the diffusion of point defects in structures with local elastic stresses;Applied Mathematical Modelling;2011-03

2. Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe;Journal of Crystal Growth;2008-05

3. Structural properties of tensile-strained Si layers grown on Si1−xGex virtual substrates (x=0.2, 0.3, 0.4 and 0.5);Thin Solid Films;2008-04

4. Tensile-strained Si layers grown on Si0.6Ge0.4and Si0.5Ge0.5virtual substrates: I. Film thickness and morphology;Semiconductor Science and Technology;2007-03-07

5. Study of HCl and Secco Defect Etching for Characterization of Thick sSOI;Journal of The Electrochemical Society;2007