Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment-Reference-Cited by-同舟云学术

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Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment

Published:2022-08 Issue: Volume:755 Page:139345
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Huang Zhong-Ying,Chen Hsuan-Han,Liao Ruo-Yin,Hsu Hsiao-Hsuan,Lin Kuan-Hsiang^ORCID,Chen Wei-Ting^ORCID,Lin Shih-Hao,Huang Ching-Chien^ORCID,Chou Wu-Ching,Cheng Chun-Hu

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides;Cheng;IEEE Trans. Electron Dev.,2019

2. Ferroelectricity in undoped hafnium oxide;Polakowski;Appl. Phys. Lett.,2015

3. Ferroelectric hafnium oxide based materials and devices: assessment of current status and future prospects;Müller;ECS J. Solid State Sci. Technol.,2015

4. A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants;Park;J. Mater. Chem. C,2017

5. Structural and electrical properties of HfO2 with top nitrogen incorporated layer;Cho;IEEE Electron Device Lett.,2002

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