Automated metrology system including VUV spectroscopic ellipsometry and X-ray reflectometry for 300 mm silicon microelectronics-Reference-Cited by-同舟云学术

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Automated metrology system including VUV spectroscopic ellipsometry and X-ray reflectometry for 300 mm silicon microelectronics

Published:2004-05 Issue: Volume:455-456 Page:798-803
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Boher P,Evrard P,Condat O,Dos Reis C,Defranoux C,Piel J.Ph,Stehle J.L,Bellandi E

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. The International Technology Roadmap for Semiconductor technology Needs, 2000 Edition, SIA

2. Dielectric Breakdown and Current Conduction of Oxide/Nitride/Oxide Multi‐Layer Structures

3. Formation of high quality ultrathin oxide/nitride (ON) stacked capacitors by in situ multiple rapid thermal processing [DRAM cells]

4. Conduction and Charge‐Trapping Characteristics of MOS Capacitors with Oxidized Nitride Films of Different Nitride Thicknesses under Positive Stress Bias

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physicochemical and electrical characterizations of atomic layer deposition grown HfO[sub 2] on TiN and Pt for metal-insulator-metal application;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

2. Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories;Solid-State Electronics;2007-11

3. Measuring the thickness of ultra-thin diamond-like carbon films;Carbon;2006-11

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