Solution processed In-Si-O thin film transistors on hydrophilic and hydrophobic substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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2. Operando hard X-ray photoelectron spectroscopy study of buried interface chemistry of Au/InO1.16C0.04/Al2O3/p+-Si stacks;Applied Surface Science;2022-08
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4. Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress;Japanese Journal of Applied Physics;2021-03-01
5. Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3;Japanese Journal of Applied Physics;2021-02-11
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