Silane versus silicon tetrafluoride in the growth of microcrystalline silicon films by standard radio frequency glow discharge-Reference-Cited by-同舟云学术

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Silane versus silicon tetrafluoride in the growth of microcrystalline silicon films by standard radio frequency glow discharge

Published:2007-07 Issue:19 Volume:515 Page:7451-7454
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Djeridane Y.,Abramov A.,Roca i Cabarrocas P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. In-SituChemically Cleaning Poly-Si Growth at Low Temperature

2. A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF4-H2-He PECVD

3. Fabrication of Polycrystalline Silicon Films from SiF4/H2/SiH4Gas Mixture Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition with In Situ Plasma Diagnostics and Their Structural Properties

4. Preparation of High-Quality Microcrystalline Silicon from Fluorinated Precursors by a Layer-by-Layer Technique

5. Control of orientation from random to (220) or (400) in polycrystalline silicon films

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3. Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions;Materials;2021-11-17

4. Versatility of Nanocrystalline Silicon Films: from Thin-Film to Perovskite/c-Si Tandem Solar Cell Applications;Coatings;2020-08-03

5. Modeling Thermal Gas Dynamic Processes of the Production of Silicon from Its Halides;Theoretical Foundations of Chemical Engineering;2020-07

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