Analysis and characterization of a mechanical sensor to monitor stress in interconnect features-Reference-Cited by-同舟云学术

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Analysis and characterization of a mechanical sensor to monitor stress in interconnect features

Published:2010-10 Issue:1 Volume:519 Page:443-449
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Wilson Christopher J.,Croes Kristof,Tőkei Zsolt,Beyer Gerald P.,Gallacher Barry J.,Bull Steve J.,Horsfall Alton B.,O'Neill Anthony G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal history

2. An x-ray method for direct determination of the strain state and strain relaxation in micron-scale passivated metallization lines during thermal cycling

3. IEEE Int. Interconnect Technology Conference Proceedings;Wilson,2009

4. Synchrotron measurement of the effect of linewidth scaling on stress in advanced Cu/Low-k interconnects

5. Study of the effect of dielectric porosity on the stress in advanced Cu/low-k interconnects using x-ray diffraction

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