Numerical modeling of SiH4 discharge for Si thin film deposition for thin film transistor and solar cells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Growth processes of particles in high frequency silane plasmas
2. Plasma chemistry of He/O2/SiH4and He/N2O/SiH4mixtures for remote plasma‐activated chemical‐vapor deposition of silicon dioxide
3. Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges
4. Development of High Density Inductively Coupled Plasma Sources for SiH4/O2/Ar Discharge
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1. Control of higher-silane generation by dilution gases in SiH4 plasmas;Plasma Sources Science and Technology;2020-09-01
2. Numerical Characteristics of Silicon Nitride SiH4/NH3/H2 Plasma Discharge for Thin Film Solar Cell Deposition;Lecture Notes in Electrical Engineering;2020-08-15
3. Two-dimensional simulations of multi-hollow VHF SiH4/H2 plasma;AIP Advances;2018-02
4. Development of a Plasma Training Lab kart: System Setup and Numerical Simulation;Applied Science and Convergence Technology;2017-11-30
5. Numerical Simulation: Effects of Gas Flow and Heat Transfer on Polymer Deposition in a Plasma Dry Etcher;Applied Science and Convergence Technology;2017-11-30
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