The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors-Reference-Cited by-同舟云学术

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The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors

Published:2006-02 Issue:2 Volume:496 Page:306-310
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chang A.C.K.,Ross I.M.,Norris D.J.,Cullis A.G.,Tang Y.T.,Cerrina C.,Evans A.G.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

2. Deep submicron CMOS based on silicon germanium technology

3. SiGe – heterostructures for CMOS technology

4. SiGe field effect transistors

5. Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for P-channel field-effect transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Focused ion beam milling and scanning electron microscopy characterization of polymer+metal hybrids;Materials Letters;2007-03

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