Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs-Reference-Cited by-同舟云学术

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Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs

Published:2010-02 Issue:9 Volume:518 Page:2427-2430
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Bazizi E.M.,Pakfar A.,Fazzini P.F.,Cristiano F.,Tavernier C.,Claverie A.,Zographos N.,Zechner C.,Scheid E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. International roadmap for semiconductor technology. Website: http://public.itrs.net.

2. SOI Technology: Materials to VLSI;Colinge,1977

3. ESSDERC;Schermer,2007

4. GADEST;Martinez-Limia,2007

5. Sentaurus Process User Guide, Version A-2008.09, Synopsys Inc., Mountain 287 View, CA, 2009.

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