The growth of bismuth on Bi2Se3 and the stability of the first bilayer-Reference-Cited by-同舟云学术

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The growth of bismuth on Bi2Se3 and the stability of the first bilayer

Published:2018-08 Issue: Volume:660 Page:343-352
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Zhu Haoshan,Zhou Weimin,Yarmoff Jory A.

Funder

U.S. Army Research Laboratory

U.S. Army Research Office

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference51 articles.

1. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface;Zhang;Nat. Phys.,2009

2. Colloquium: Topological insulators;Hasan;Rev. Mod. Phys.,2010

3. Topological insulators and superconductors;Qi;Rev. Mod. Phys.,2011

4. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface;Xia;Nat. Phys.,2009

5. Termination of single-crystal Bi2Se3 surfaces prepared by various methods;Zhou;Phys. Rev. B,2016

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1. Signal oscillations in helium scattering by bismuth atoms in the low energy range;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-08

2. Solid State Reaction Epitaxy, A New Approach for Synthesizing Van der Waals heterolayers: The Case of Mn and Cr on Bi₂Se₃;Advanced Functional Materials;2024-03-12

3. High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy;Journal of Crystal Growth;2024-02

4. Effects of Bi<sub>2</sub>Te<sub>3</sub>(111) and Al<sub>2</sub>O<sub>3</sub>(0001) substrates on electronic and topological properties of Bi(111) bilayer;Acta Physica Sinica;2022

5. Prediction of giant and ideal Rashba-type splitting in ordered alloy monolayers grown on a polar surface;National Science Review;2020-09-25

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