Comprehensive investigation of thermal induced reorganization of porous-germanium structures-Reference-Cited by-同舟云学术

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Comprehensive investigation of thermal induced reorganization of porous-germanium structures

Published:2024-06 Issue: Volume:798 Page:140391
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ayari Ahmed^ORCID,Ilahi Bouraoui^ORCID,Arvinte Roxana,Hanuš Tadeáš^ORCID,Mouchel Laurie,Cho Jinyoun^ORCID,Dessein Kristof^ORCID,Machon Denis^ORCID,Boucherif Abderraouf^ORCID

Publisher

Elsevier BV

Reference37 articles.

1. Uprooting defects to enable high-performance III–V optoelectronic devices on silicon;Bioud;Nat. Commun.,2019

2. Defect free strain relaxation of microcrystals on mesoporous patterned silicon;Heintz;Nat. Commun.,2022

3. Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer;Mbeunmi;Solar Energy Mater. Solar Cell.,2020

4. Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(1 1 1) heterostructures;Seredin;Appl. Surf. Sci.,2020

5. Kerfless Wafering Approach with Si and Ge Templates for Si, Ge and III-V Epitaxy;Janz,2020

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tailoring Ge membrane adhesion strength: Impact of growth parameters and porous layer thickness;Materials Characterization;2024-10

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