High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure-Reference-Cited by-同舟云学术

High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure

Published:2013-02 Issue: Volume:529 Page:421-425
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Wang Chao-Lung,Lee I-Che,Wu Chun-Yu,Cheng Yu-Ting,Yang Po-Yu,Cheng Huang-Chung

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. SID Tech. Digest;Park,2003

2. A very low temperature single crystal germanium growth process on insulating substrate using Ni-induced lateral crystallization for three-dimensional integrated circuits

3. High-Performance Poly-Si TFTs Using Ultrathin $\hbox{HfSiO}_{x}$ Gate Dielectric for Monolithic Three-Dimensional Integrated Circuits and System on Glass Applications

4. Characteristics of low-temperature poly-Si TFTs on Al/glass substrates

5. Multichannel Poly-Si Thin-Film Transistors Prepared by Excimer Laser Annealing With Channel Width Comparable or Smaller Than the Grain Size

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4. Pulsed–light Crystallization of Thin Film Silicon, Germanium, and Silicon Germanium Alloy;MRS Proceedings;2014