Evaluation of field emission properties from multiple-stacked Si quantum dots-Reference-Cited by-同舟云学术

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Evaluation of field emission properties from multiple-stacked Si quantum dots

Published:2016-03 Issue: Volume:602 Page:68-71
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Takeuchi Daichi,Makihara Katsunori,Ohta Akio,Ikeda Mitsuhisa,Miyazaki Seiichi

Funder

Ministry of Education, Culture, Sports, Science and Technology, Japan

JSPS

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Multiple-step electron charging in silicon-quantum-dot floating gate metal-oxide-semiconductor memories;Ikeda;Jpn. J. Appl. Phys.,2003

2. Control of electronic charged states of Si-based quantum dots for floating gate application;Miyazaki;Thin Solid Films,2008

3. Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge;Ogi;Microelectron. Eng.,2008

4. Observation of discrete dopant potential and its application to Si single-electron devices;Tabe;Thin Solid Films,2010

5. Self-align formation of Si quantum dots;Makihara;ECS Trans.,2010

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures;IEICE Transactions on Electronics;2022-10-01

2. Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots;IEICE Transactions on Electronics;2019-06-01

3. Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy;Japanese Journal of Applied Physics;2018-11-26

4. Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties;Materials Science in Semiconductor Processing;2017-11

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