Back gate influence on front channel operation of p-channel double gate polysilicon TFTs-Reference-Cited by-同舟云学术

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Back gate influence on front channel operation of p-channel double gate polysilicon TFTs

Published:2009-10 Issue:23 Volume:517 Page:6364-6366
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Michalas L.,Papaioannou G.J.,Kouvatsos D.N.,Voutsas A.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Electric-field-enhanced crystallization of amorphous silicon

2. A new poly-Si thin-film transistor with poly-Si/a-Si double active layer

3. A C-switch cell for low-voltage and high-density SRAMs

4. Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors

5. Electrical Characterization of Silicon-on-Insulator Materials and Devices;Cristoloveanu,1995

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