Resistive switching in TiO2-based metal–insulator–metal structures with Al2O3 barrier layer at the metal/dielectric interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application
2. Memristive switching mechanism for metal/oxide/metal nanodevices
3. Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO x /TiO y frameworks due to oxygen vacancy drifts
4. A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
5. The unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devices
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1. Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching;ACS APPL ELECTRON MA;2023
2. Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching;ACS Applied Electronic Materials;2023-03-08
3. Electrical properties of Pt/TiO2/Pt and Pt/TiO2/TiN structures grown by atomic layer deposition using TTIP and water;2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM);2022-10-23
4. Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices;Advanced Electronic Materials;2020-11-30
5. Sol-gel based zirconium dioxide dielectrics by oxygen-annealing at low temperature for highly stable and robust flexible resistive random access memory;Journal of Alloys and Compounds;2020-06
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