Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
Author:
Affiliation:
1. Peter Grünberg Institut (PGI‐7 / 10) Forschungszentrum Jülich GmbH & JARA‐FIT Jülich 52425 Germany
2. Institute of Electronic Materials (IWE2) & JARA‐FIT RWTH Aachen University Aachen 52074 Germany
Funder
Bundesministerium für Bildung und Forschung
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000815
Reference76 articles.
1. The missing memristor found
2. Nanoionics-based resistive switching memories
3. Memristive switching mechanism for metal/oxide/metal nanodevices
4. Metal–Oxide RRAM
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