Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices-Reference-Cited by-同舟云学术

Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices

Published:2020-11-30 Issue:1 Volume:7 Page:2000815
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Siegel Sebastian¹^ORCID,Baeumer Christoph¹²^ORCID,Gutsche Alexander¹^ORCID,Witzleben Moritz²^ORCID,Waser Rainer¹²^ORCID,Menzel Stephan¹^ORCID,Dittmann Regina¹^ORCID

Affiliation:

1. Peter Grünberg Institut (PGI‐7 / 10) Forschungszentrum Jülich GmbH & JARA‐FIT Jülich 52425 Germany

2. Institute of Electronic Materials (IWE2) & JARA‐FIT RWTH Aachen University Aachen 52074 Germany

Funder

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000815

Reference76 articles.

1. The missing memristor found

2. Nanoionics-based resistive switching memories

3. Memristive switching mechanism for metal/oxide/metal nanodevices

4. Metal–Oxide RRAM

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