Amorphous thin GeSbTe phase-change films prepared by radical-assisted metal-organic chemical vapor deposition

Author:

Fujisaki Yoshihisa,Sasago Yoshitaka,Kobayashi Takashi

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Review of emerging new solid-state non-volatile memories;Fujisaki;Jpn. J. Appl. Phys.,2013

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3. Bit cost scalable technology with punch and plug process for ultra high density flash memory;Tanaka,2007

4. Vertical cell array using TCAT (terabit cell array transistor) technology for ultra high density NAND flash memory;Jang,2009

5. A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND flash using junction-free buried channel BE-SONOS device;Lue,2010

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