Optimization of MoSe 2 formation for Cu(In,Ga)Se 2 -based solar cells by using thin superficial molybdenum oxide barrier layers-Reference-Cited by-同舟云学术

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Optimization of MoSe 2 formation for Cu(In,Ga)Se 2 -based solar cells by using thin superficial molybdenum oxide barrier layers

Published:2013-10 Issue: Volume:545 Page:94-99
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Duchatelet A.,Savidand G.,Vannier R.N.,Lincot D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. High‐efficiency CuInxGa1−xSe2solar cells made from (Inx,Ga1−x)2Se3precursor films

2. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%

3. Thin Film Deposition Methods for CuInSe2Solar Cells

4. Characterization of the Cu(In,Ga)Se2/Mo interface in CIGS solar cells

5. Chemical properties of the Cu(In,Ga)Se2/Mo/glass interfaces in thin film solar cells

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4. The Photovoltaic Cell Based on CIGS: Principles and Technologies;Materials;2022-03-04

5. Review article on the lattice defect and interface loss mechanisms in kesterite materials and their impact on solar cell performance;Solar Energy;2021-12

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