Amorphous Si1−xCx:H films prepared by hot-wire CVD using SiH3CH3 and SiH4 mixture gas and its application to window layer for silicon thin film solar cells-Reference-Cited by-同舟云学术

Amorphous Si1−xCx:H films prepared by hot-wire CVD using SiH3CH3 and SiH4 mixture gas and its application to window layer for silicon thin film solar cells

Published:2008-01 Issue:5 Volume:516 Page:758-760
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ogawa Shunsuke,Okabe Masaaki,Itoh Takashi,Yoshida Norimitsu,Nonomura Shuichi

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cells

2. Recent progress of Cat-CVD research in Japan—bridging between the first and second Cat-CVD conferences

3. Current status of the thermo-catalytic (hot-wire) CVD of thin silicon films for photovoltaic applications

4. Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiCN:H thin films deposited by MW‐PECVD with liquid organosilicon precursor: Gas ratio influence versus properties of the deposits;Plasma Processes and Polymers;2019-11-04

2. Back reflection and temperature effects on n-i-p-p+ amorphous and nanocrystalline silicon based solar cells performances;Optik;2016-10

3. Self-assembled nc-Si-QD/a-SiC thin films from planar ICP-CVD plasma without H2-dilution: a combination of wide optical gap, high conductivity and preferred 〈220〉 crystallographic orientation, uniquely appropriate for nc-Si solar cells;RSC Advances;2016

4. Nanocrystalline thin film silicon solar cells: A deeper look into p/i interface formation;Thin Solid Films;2015-09

5. Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. 1. Growth mechanism and chemical structure of deposited a-SiC:H films;Thin Solid Films;2014-08