Characteristics of low-κ SiOC films deposited via atomic layer deposition-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Characteristics of low-κ SiOC films deposited via atomic layer deposition

Published:2018-01 Issue: Volume:645 Page:334-339
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee Jaemin,Jang Woochool,Kim Hyunjung,Shin Seokyoon,Kweon Youngkyun,Lee Kunyoung,Jeon Hyeongtag

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Low dielectric constant materials for microelectronics;Maex;J. Appl. Phys.,2003

2. Highly selective silicon nitride etching to Si and SiO2 for a gate sidewall spacer using a CF3I/O2/H2 neutral beam;Nakayama;J. Phys. D. Appl. Phys.,2013

3. Stabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatment;Mei;Thin Solid Films,1997

4. Structure-designable method to form super low-k SiOC film (k=2.2) by neutral-beam-enhanced chemical vapour deposition;Yasuhara;J. Phys. D. Appl. Phys.,2009

5. Thermodynamic stability of low-k amorphous SiOCH dielectric films;Chen;J. Am. Ceram. Soc.,2016

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine‐learning interatomic potentials for pyrolysis of polysiloxanes and properties of SiCO ceramics;Journal of the American Ceramic Society;2024-08-06

2. Atomic layer etching of SiCO films with surface modification by O2 and CF4/NH3/Ar plasmas and desorption by IR annealing;Journal of Vacuum Science & Technology A;2024-06-07

3. Remote plasma chemical vapor deposition of silicon oxycarbide film with a styrene-containing precursor and in situ O2 plasma treatment;Thin Solid Films;2024-06

4. Fabrication of the low-k films with tunable k value as spacers in advanced CMOS technology;Journal of Vacuum Science & Technology A;2024-02-29

5. Etch Damage of SiOC Thin Films in an Inductively Coupled Plasma Using Low-Frequency;Applied Science and Convergence Technology;2024-01-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3