Enhancement of metal-insulator transition performance of VO2 thin films by conventional furnace annealing-Reference-Cited by-同舟云学术

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Enhancement of metal-insulator transition performance of VO2 thin films by conventional furnace annealing

Published:2021-07 Issue: Volume:730 Page:138709
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Liang Jiran,Yu Xuan,Zhao Yirui,Fan Xiaowei,Wu Wenhao,Wang Shuangli

Funder

Tianjin Research Program of Application Foundation and Advanced Technology of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Oxides which show a metal-to-insulator transition at the neel temperature;Morin;Phys. Rev. Lett.,1959

2. Study on optical and electrical switching properties and phase transition mechanism of Mo6+-doped vanadium dioxide thin films;Xu;J. Mater. Sci.,2004

3. Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates;Zhao;J. Appl. Phys.,2012

4. Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy;Aetukuri;Nat. Phys.,2013

5. Oxide electronics utilizing ultrafast metal-insulator transitions;Yang;Annu. Rev. Mater. Res.,2011

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