3D heteroepitaxy of mismatched semiconductors on silicon
Author:
Funder
Swiss federal
Regione Lombardia
INGO LA
Research4Industry
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference40 articles.
1. Effects of misfit dislocations and thermally induced strain on the film properties of heteroepitaxial GaAs on Si
2. Pixel detectors for particle physics and imaging applications
3. Crystal Interfaces. Part I. Semi‐Infinite Crystals
4. Crystal Interfaces. Part II. Finite Overgrowths
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