Defect analysis of thin film Si-based alloys deposited by hot-wire CVD using junction capacitance methods-Reference-Cited by-同舟云学术

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Defect analysis of thin film Si-based alloys deposited by hot-wire CVD using junction capacitance methods

Published:2008-01 Issue:5 Volume:516 Page:663-669
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Cohen J. David,Datta Shouvik,Palinginis Kimon,Mahan A.H.,Iwaniczko Eugene,Xu Yueqin,Branz Howard M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 Å/s

2. Amorphous Silicon and Silicon Germanium Alloy Solar Cells Deposited by VHF at High Rates

3. Hyrogenated Amorphous Silicon with High Growth Rate, Gas Utilization and Homogeneous Deposition by Amplitude Modulated Vhf-Pecvd for Solar Cell Application

4. NREL Report SR-520-32535;Cohen,2002

5. Influence of Filament and Substrate Temperatures on Structural and Optoelectronic Properties of Narrow Gap a-SiGe:H Alloys Deposited by Hot-Wire CVD

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A direct correlation between film structure and solar cell efficiency for HWCVD amorphous silicon germanium alloys;Thin Solid Films;2009-04

2. Junction capacitance study of an oxygen impurity defect exhibiting configuration relaxation in amorphous silicon–germanium alloys deposited by hot-wire CVD;Journal of Non-Crystalline Solids;2008-05

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