Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure-Reference-Cited by-同舟云学术

Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure

Author:

Roy Arijit,Tan Cher Ming

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Proceedings of the IEEE International Symposium on VLSI Technology, Systems, and Applications, Hsinchu, Taiwan, Roc,18–20 April 2001;Lai,2001

2. Proceedings of the 38th IEEE International Reliability Physics Symposium, San Jose, CA, 10–13 April 2000;Fischer,2000

4. Proceedings of the IEEE International Interconnect Technology Conference, Burlingame, CA, 3–5 June 2002;Fischer,2002

5. Proceedings of the 40th IEEE International Reliability Physics Symposium, Dallas, Texas, 7–11 April 2002;Gill,2002

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