Defining new frontiers in electronic devices with high κ dielectrics and interfacial engineering-Reference-Cited by-同舟云学术

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Defining new frontiers in electronic devices with high κ dielectrics and interfacial engineering

Published:2007-05 Issue:14 Volume:515 Page:5581-5586
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hong M.,Lee W.C.,Huang M.L.,Chang Y.C.,Lin T.D.,Lee Y.J.,Kwo J.,Hsu C.H.,Lee H.Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

2. Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces

3. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural transformation of Ga2O3-based catalysts during photoinduced reforming of methanol;Materials Research Bulletin;2017-11

2. Impact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al2O3/GaAs MOS capacitor;physica status solidi (a);2015-05-13

3. (Invited) InGaSb MOSFET Channel on Metamorphic Buffer: Materials, Interfaces and Process Options;ECS Transactions;2013-05-03

4. Achieving very high drain current of 1.23mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET;Journal of Crystal Growth;2011-05

5. MBE—Enabling technology beyond Si CMOS;Journal of Crystal Growth;2011-05

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