Effect of Ti-rich TiN as a Co-salicide capping layer for 0.15 um embedded flash memory devices and beyond-Reference-Cited by-同舟云学术

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Effect of Ti-rich TiN as a Co-salicide capping layer for 0.15 um embedded flash memory devices and beyond

Published:2006-05 Issue:1-2 Volume:504 Page:20-24
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kim Nam Sung,Mukhopadhyay M.,Wong Wing Yew,You Young Seon,Zhao Jing,Lim Benjamin,Lee Kyeong Sik,Shukla Dhruva,Goh Inn Swee

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. IEDM Tech. Dig.;Yamazaki,1993

2. IEDM Tech. Dig.;Lai,1998

3. Introduction to flash memory

4. Nonvolatile multilevel memories for digital applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxidation suppression in ytterbium silicidation by Ti∕TiN bicapping layer;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-03

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