Effects of the Si/Al layer thickness on the continuity, crystalline orientation and the growth kinetics of the poly-Si thin films formed by aluminum-induced crystallization-Reference-Cited by-同舟云学术

Effects of the Si/Al layer thickness on the continuity, crystalline orientation and the growth kinetics of the poly-Si thin films formed by aluminum-induced crystallization

Published:2016-10 Issue: Volume:616 Page:213-219
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Tutashkonko Sergii^ORCID,Usami Noritaka

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation;Kurosawa;Appl. Phys. Lett.,2009

2. Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis;Huang;Sci. China Technol. Sci.,2010

3. Al-induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth;Kurosawa;Solid State Electron.,2011

4. Orientation control of large-grained si films on insulators by thickness-modulated al-induced crystallization;Numata;Cryst. Growth Des.,2013

5. Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange;Numata;Thin Solid Films,2014

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