Electrical transport mechanisms in amorphous/crystalline silicon heterojunction: Impact of passivation layer thickness-Reference-Cited by-同舟云学术

Electrical transport mechanisms in amorphous/crystalline silicon heterojunction: Impact of passivation layer thickness

Published:2014-05 Issue: Volume:558 Page:315-319
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mikolášek Miroslav,Nemec Michal,Vojs Marian,Jakabovič Ján,Řeháček Vlastimil,Zhang Dong,Zeman Miro,Harmatha Ladislav

Funder

Slovak Research and Development Agency

Scientific Grant Agency of the Ministry of Education of the Slovak Republic

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. W. Fuhs, G. Heder, K. Niemann, and J. Stuke. Properties of junctions between amorphous and crystalline silicon. In: Proceedings of the 6th International Conference on Amorphous and Liquid Semiconductors, Leningrad, USSR, Soviet Academy of Sciences, A.F. Ioffe, pp. 343–347, 1975.

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